R2J25953 Description
The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver in a single HSOP-36 package. R07DS0044EJ0300 Rev.3.00 Sep 01, 2010.
R2J25953 Key Features
- For Automotive application
- Built-in low on state resistance MOS FET. (Pch: 16 m Max., Nch: 11 m Max.)
- Pch MOS FET is adopted on the high-side, and the charge pump noise was lost
- Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD) and Overcur
- Built-in diagnostic function
- Built-in cross-conduction protection
- Small Surface mounting package: HSOP-36