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R2J25953

Manufacturer: Renesas

R2J25953 datasheet by Renesas.

R2J25953 datasheet preview

R2J25953 Datasheet Details

Part number R2J25953
Datasheet R2J25953_RenesasTechnology.pdf
File Size 169.75 KB
Manufacturer Renesas
Description H-Bridge Control High Speed Power Switching
R2J25953 page 2 R2J25953 page 3

R2J25953 Overview

The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver in a single HSOP-36 package. R07DS0044EJ0300 Rev.3.00 Sep 01, 2010.

R2J25953 Key Features

  • For Automotive application
  • Built-in low on state resistance MOS FET. (Pch: 16 m Max., Nch: 11 m Max.)
  • Pch MOS FET is adopted on the high-side, and the charge pump noise was lost
  • Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD) and Overcur
  • Built-in diagnostic function
  • Built-in cross-conduction protection
  • Small Surface mounting package: HSOP-36

R2J25953SP from other manufacturers

View R2J25953SP datasheet index

Brand Logo Part Number Description Other Manufacturers
Renesas Logo R2J25953SP H-Bridge Control High Speed Power Switching Renesas
Renesas logo - Manufacturer

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R2J25953 Distributor

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