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Preliminary Datasheet
R2J25953
H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET
Description
The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver in a single HSOP-36 package. R07DS0044EJ0300 Rev.3.00 Sep 01, 2010
Features
For Automotive application Built-in low on state resistance MOS FET. (Pch: 16 m Max., Nch: 11 m Max.) Pch MOS FET is adopted on the high-side, and the charge pump noise was lost. Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD) and Overcurrent Detection. Built-in diagnostic function. Built-in cross-conduction protection.
R2J25953 Datasheet
