• Part: R2J25953
  • Description: H-Bridge Control High Speed Power Switching
  • Manufacturer: Renesas
  • Size: 169.75 KB
Download R2J25953 Datasheet PDF
R2J25953 page 2
Page 2
R2J25953 page 3
Page 3

Datasheet Summary

Preliminary Datasheet H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET Description The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver in a single HSOP-36 package. R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Features - For Automotive application - Built-in low on state resistance MOS FET. (Pch: 16 m Max., Nch: 11 m Max.) - Pch MOS FET is adopted on the high-side, and the charge pump noise was lost. - Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD) and Overcurrent Detection. - Built-in diagnostic function. - Built-in cross-conduction...