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RJK0351DSP - Silicon N Channel Power MOS FET Power Switching

Features

  • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.0 mΩ typ. (at VGS = 10 V).
  • Pb-free.
  • Outline.

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www.DataSheet4U.com RJK0351DSP Silicon N Channel Power MOS FET Power Switching REJ03G1721-0200 Rev.2.00 Jul 10, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.0 mΩ typ.
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