Datasheet4U Logo Datasheet4U.com

RJK0364DPA - Silicon N Channel Power MOS FET Power Switching

Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 mΩ typ. (at VGS = 10 V).
  • Pb-free.
  • Outline.

📥 Download Datasheet

📁 Similar Datasheet

Other Datasheets by Renesas Technology
  • RJK0362DSP - Silicon N Channel Power MOS FET Power Switching
  • RJK0365DPA - Silicon N Channel Power MOS FET Power Switching
  • RJK0366DPA - Silicon N Channel Power MOS FET Power Switching
  • RJK0366DSP - Silicon N Channel Power MOS FET Power Switching
  • RJK0368DPA - Silicon N Channel Power MOS FET Power Switching
  • RJK0369DSP - Silicon N Channel Power MOS FET Power Switching
  • RJK0301DPB - Silicon N Channel Power MOS FET Power Switching
  • RJK0302DPB - Silicon N Channel Power MOS FET Power Switching

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com RJK0364DPA Silicon N Channel Power MOS FET Power Switching REJ03G1654-0300 Rev.3.00 Aug 05, 2008 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 mΩ typ. (at VGS = 10 V) • Pb-free • • • • • Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
Published: |