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RJK0371DSP - Silicon N Channel Power MOS FET Power Switching

Features

  • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 14 mΩ typ. (at VGS = 10 V).
  • Pb-free.
  • Outline.

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www.DataSheet4U.com RJK0371DSP Silicon N Channel Power MOS FET Power Switching REJ03G1663-0201 Rev.2.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 14 mΩ typ. (at VGS = 10 V) • Pb-free • • • • Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 76 34 5 6 7 8 D D D D 8 12 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR Note1 Ratings 30 ±20 8 64 8 7 4.9 1.
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