Datasheet4U Logo Datasheet4U.com

RJK03N0DPA - Built in SBD N Channel Power MOS FET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance.
  • Pb-free.
  • Halogen-free Outline Preliminary Datasheet R07DS0781EJ0200 Rev.2.00 Feb 12, 2013.

📥 Download Datasheet

📁 Similar Datasheet

Other Datasheets by Renesas Technology

Full PDF Text Transcription

Click to expand full text
RJK03N0DPA 30V, 45A, 2.4mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline Preliminary Datasheet R07DS0781EJ0200 Rev.2.00 Feb 12, 2013 RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 5 678 D DDD 4321 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2.
Published: |