RJK0602DPN-E0 Description
RJK0602DPN-E0 N-Channel MOS FET 60 V, 100 A, 3.9.
RJK0602DPN-E0 Key Features
- High speed switching
- Low drive current
- Low on-resistance RDS(on) = 3.1 m typ. (at VGS = 10 V)
- Package TO-220AB
RJK0602DPN-E0 is N-Channel MOS FET manufactured by Renesas.
| Part Number | Description |
|---|---|
| RJK0601DPN-E0 | N-Channel MOSFET |
| RJK0603DPN-E0 | N-Channel MOSFET |
| RJK0651DPB | Silicon N Channel Power MOS FET |
| RJK0652DPB | Silicon N Channel Power MOS FET |
| RJK0655DPB | Silicon N Channel Power MOS FET |
RJK0602DPN-E0 N-Channel MOS FET 60 V, 100 A, 3.9.