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RJK2006DPJ, RJK2006DPE, RJK2006DPF
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0512-0100 Rev.1.00 Jan.14.2005
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
LDPAK
D 4 4 4
G 1
1
2
3
1
S
3 RJK2006DPE 2 3 RJK2006DPF RJK2006DPJ
2
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current www.DataSheet4U.com Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
RJK2006DPE Datasheet
