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RJK4015DPK - High Speed Power Switching MOS FET

Description

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Features

  • Low on-resistance RDS(on) = 0.14  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C).
  • Low leakage current.
  • High speed switching Outline.

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Datasheet Details

Part number RJK4015DPK
Manufacturer Renesas Technology
File Size 73.13 KB
Description High Speed Power Switching MOS FET
Datasheet download datasheet RJK4015DPK Datasheet
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RJK4015DPK 400V - 30A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.14  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) Preliminary Datasheet R07DS0446EJ0200 (Previous: REJ03G1590-0100) Rev.2.00 Jun 21, 2012 1 2 3 D G S 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1 % 2. Value at Tc = 25C 3.
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