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RJK4518DPK
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.11 typ. (at ID = 19.5 A, VGS = 10 V, Ta = 25C)
Low leakage current High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
D
1 2 3
G S
Preliminary Datasheet
R07DS0132EJ0200 (Previous: REJ03G1529-0100)
Rev.2.00 Sep 08, 2010
1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C 3.
RJK4518DPK Datasheet
