RJP60D0DPP-M0 Datasheet | Renesas

Preliminary Datasheet Silicon N Channel IGBT High Speed Power Switching Features - Short circuit withstand time (5 s typ.) - Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C) - Gate to emitter voltage rating 30 V - Pb-free lead plating and chip bonding R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 1. Gate 2. Collector 3. Emitter 2...