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RJP60D0DPP-M0 Datasheet Silicon N-channel IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power.

Key Features

  • Short circuit withstand time (5 s typ. ).
  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C).
  • Gate to emitter voltage rating 30 V.
  • Pb-free lead plating and chip bonding R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Outline.

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