RQM2201DNS Datasheet | Renesas

Features - - - - - Small, thin and leadless type package (3 × 3 mm, t = 0.8 mm max.) Two FET chips are mounted in one package High density mounting High speed switching. (Ciss = 200 p F typ) VDSS ≥ 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PWSN0006ZA-A (Package name: WSON0303-6 <HWSON-6>) FET No.1 (Nch) 6 D FET No.2 (Nch) 5 D 4 G 2 G 3 2 (Bottom view) S 1 S 3 1, 3: Source 2, 4: Gate 5, 6: Drain Notes: 1. Marking is “M2201“. 2. The following maximum ratings and electric characteristics are applied to both FET1 and FET2. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Pch Note3 Tch Tstg Ratings 60 ±12 2 8 2 1 1.5 150 - 55 to +150 Unit V V A A A W W °C °C Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR-4 40 × 40 × 1 mm) 3. 2 Drive operation: When using the glass epoxy board (FR-4 40 × 40 × 1 mm) REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 1 of 7 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward voltage Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 60 +12 - 12 - - - 0.4 - - 2.3 - - - -...