Renesas Electronics 1SS119
Silicon Epitaxial Planar Diode
| Part No. | 1SS119 |
|---|---|
| Datasheet | 1SS119 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon Epitaxial Planar Diode |
| Buy | Stock & Price |
FEATURES
● Low capacitance. (C = 3.0 pF max)● Short reverse recovery time. (trr = 3.5 ns max)
● Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS119 Cathode band Light Blue Package Name MHD Package Code (Previous Code) GRZZ0002ZC-A (MHD) Pin Arrangement 1 Cathode band 2 1. Cathode 2. Anode Rev.3.00 Mar 22, 2005 page 1 of 4 1SS119
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-Repetitive peak forward surge current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR IO IFM IFSM * Pd Tj Tstg Value 35 30 150 450 1 250 175 −65 to +175 Unit V V mA mA A mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C trr * Min — — — — Typ — — — — Max 0.8 0.1 3.0 3.5 Unit V µA pF ns Test Condition IF = 10 mA VR = 30 V VR = 1 V, f =...
