Renesas Electronics 1SS304
SILICON EPITAXIAL DOUBLE DIODE
| Part No. | 1SS304 |
|---|---|
| Datasheet | 1SS304 Download |
| Manufacturer |  Renesas Electronics |
| Description | SILICON EPITAXIAL DOUBLE DIODE |
| Buy | Stock & Price |
FEATURES
● Low capacitance: Ct = 1.1 pF TYP.● High speed switching: trr = 3.0 ns MAX.
● Wide applications including switching, limitter, clipper.
● Double diode configuration assures economical use. PACKAGE DIMENSIONS (Unit: mm) 2.1±0.1 1.25±0.1
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25°C) Peak Reverse Voltage VRM DC Reverse Voltage VR Surge Current (1 µs) Note IFSM Surge Current (1 µs) IFSM Peak Forward Current Note IFM Peak Forward Current IFM Average Rectified Current Note IO Average Rectified Current IO Maximum Temperatures Junction Temperature Tj Storage Temperature Range Tstg Thermal Resistance Junction to Ambient Note Rth(j-a) Junction to Ambient Rth(j-a) Note Both diodes loaded simultaneously. 75 V 50 V 6.0 A 4.0 A 450 mA 300 mA 150 mA 100 mA 150 °C –55 to + 150 °C 1.0 °C/mW 0.85 °C/mWELECTRICAL CHARACTERISTICS
(TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Forward Voltage VF1 IF = 10 mA VF2 IF = 50 mA VF3 IF = 100 mA Reverse Current IR VR = 50 V Capacitance Ct VR = 0 V, f = 1.0 MHz Reverse Recovery Time trr See Test Circuit.
