22N055 - N-CHANNEL POWER MOSFET

Renesas

General Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Key Features

Channel temperature 175 degree rated.
Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A).
Low Ciss : Ciss = 590 pF TYP.
Built-in gate protection diode.

📥 Download Datasheet

22N055 n-channel power mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	22N055
Manufacturer	Renesas
File Size	203.34 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	22N055 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
22N10	N-Channel MOSFET	Inchange Semiconductor
22N20	N-Channel Power MOSFET	Unisonic Technologies
22N50	N-Channel MOSFET	Inchange Semiconductor
22N55	IXFH22N55	IXYS
22N60	N-CHANNEL POWER MOSFET	Unisonic Technologies

Other Datasheets by Renesas

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE, NP22N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low Ciss : Ciss = 590 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP22N055HHE NP22N055IHE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP22N055SHE TO-252 (JEDEC) / MP-3ZK Note Not for new design.