ABSOLUTE MAXIMUM RATINGS
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings –30 –30 –5 –100 100 150 150 –55 to +150 (Ta = 25°C) Unit V V V mA mA mW °C °C Rev.3.00 Aug 10, 2005 page 1 of 5 2SA1052 ELECTRICAL CHARACTERISTICS
Item Symbol Min Collector to base breakdown voltage V(BR)CBO –30 Collector to emitter breakdown voltage V(BR)CEO –30 Emitter to base breakdown voltage V(BR)EBO –5 Collector cutoff current ICBO — Emitter cutoff current DC current transfer ratio IEBO — hFE*1 160 Collector to emitter saturation voltage VCE(sat) — Base to emitter voltage VBE — Note: 1. The 2SA1052 is grouped by hFE as follows. Grade C D Mark MC MD hFE 160 to 320 250 to 500 (Ta = 25°C) Typ Max Unit Test conditions — — V IC = –10 µA, IE = 0 — — V IC = –1 mA, RBE = ∞ — — V IE = –10 µA, IC = 0 — –0.5 µA VCB = –20 V, IE = 0 — –0.
Renesas Electronics
