ABSOLUTE MAXIMUM RATINGS
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –90 –90 –5 –50 150 150 –55 to +150 (Ta = 25°C) Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 4 2SA1171 ELECTRICAL CHARACTERISTICS
Item Symbol Min Collector to emitter breakdown voltage V(BR)CEO –90 Collector cutoff current DC current transfer ratio ICBO — hFE*1 250 Base to emitter voltage VBE — Collector to emitter saturation voltage VCE(sat) — Gain bandwidth product fT — Collector output capacitance Cob — Note: 1. The 2SA1171 is grouped by hFE as follows. Grade D E Mark PD PE hFE 250 to 500 400 to 800 (Ta = 25°C) Typ Max Unit Test conditions — — V IC = –1 mA, RBE = ∞ — –0.5 µA VCB = –75 V, IE = 0 — 800 VCE = –12 V, IC = –2 mA — –0.75 V VCE = –12 V, IC = –2 mA — –0.5 V IC = –10 mA, IB = –1 mA 200 — MHz VCE = –12 V, IC = –2 mA 1.6 — pF VCB =...
Renesas Electronics
