• Part: 2SA1843
  • Description: PNP SILICON EPITAXIAL POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Renesas
  • Size: 181.82 KB
Download 2SA1843 Datasheet PDF
Renesas
2SA1843
features a high h FE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES - Auto-mounting possible in radial taping specifications - Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions - High h FE and low VCE(sat): VCE(sat) ≤ - 0.3 V @IC = - 3.0 A, IB = - 0.15 A h FE ≥ 100 @VCE = - 2.0 V, IC = - 1.0 A - Fast switching speed ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Conditions PW ≤ 300 µs, duty cycle ≤ 2% Ta = 25°C Ratings - 100 - 60 - 7.0 - 5.0 - 10 - 2.5 1.8 150 - 55 to +150 Unit...