Datasheet4U.com

2SB1002 Datasheet PDF

Renesas Electronics 2SB1002

Silicon PNP Transistor

Part No. 2SB1002
Datasheet 2SB1002 Download
Manufacturer
Renesas Electronics
Description Silicon PNP Transistor
Buy Stock & Price
2SB1002 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current Collector peak current Collector power dissipation IC iC(peak) *1 PC*2 Junction temperature Tj Storage temperature Tstg Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Ratings –70 –50 –6 –1 –1.5 1 150 –55 to +150 (Ta = 25°C) Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SB1002

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –70 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –50 — — V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –6 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO — — –0.1 µA VCB = –50 V, IE = 0 Emitter cutoff current IEBO — — –0.1 µA VEB = –4 V, IC = 0 DC current transfer ratio hFE 160 — 320 VCE = –2 V, IC = –0.1 A Collector to emit...
2SB1002 page 2 preview 2SB1002 page 3 preview