Renesas Electronics 2SB647A
PNP Transistor
ABSOLUTE MAXIMUM RATINGS
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SB647 –120 –80 –5 –1 –2 0.9 150 –55 to +150 2SB647A –120 –100 –5 –1 –2 0.9 150 –55 to +150 (Ta = 25°C) Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SB647, 2SB647AELECTRICAL CHARACTERISTICS
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO