ABSOLUTE MAXIMUM RATINGS
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 3 2 1 Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –70 –50 –6 –1 0.9 150 –55 to +150 (Ta = 25°C) Unit V V V A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SB740 ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –70 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –50 — — V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –6 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO — — –1 µA VCB = –55 V, IE = 0 Emitter cutoff current DC current transfer ratio IEBO — — –0.2 µA VEB = –6 V, IC = 0 hFE*1 100 — 320 VCE = –2 V, IC = –0.1 A Collector to emitter saturation voltage VCE(sat) — — –0.6 V IC = –1 A, IB = –0.1 A Gain bandwidth product fT — 150 — MHz VCE = –2 V, IC = –10 mA Collector output capacitance Cob — 35 — pF VCB = –10 V, IE = 0, f = 1 MHz Note: 1.
Renesas Electronics
