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2SB962-Z - PNP Transistor

Download the 2SB962-Z datasheet PDF. This datasheet also covers the 2SB962 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Switching, especially in Hybrid Integrated Circuits.

Key Features

  • Low VCE(sat): VCE(sat) =.
  • 0.3 V TYP.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB962-Renesas.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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2SB963-Z PNP Transistor NEC
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Other Datasheets by Renesas

Part Number Description
2SB1001 Silicon PNP Transistor
2SB1002 Silicon PNP Transistor
2SB1115 PNP SILICON EPITAXIAL TRANSISTOR
2SB1301 PNP SIlicon Transistor
2SB1392 Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET SILICON POWER TRANSISTOR 2SB962-Z PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB962-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.3 V TYP. PACKAGE DRAWING (Unit: mm) 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 −0.1 2.3 ±0.2 0.5 ±0.1 Note 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 5.6 ±0.3 9.5 ±0.5 5.5 ±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base voltage VCBO −40 V Collector to Emitter voltage VCEO −30 V Emitter to Base voltage VEBO −5 V Collector Current (DC) IC(DC) −3 A Collector Current (pulse) Note 1 IC(pulse) −6 A Total Power Dissipation (TA = 25°C) Note 2 PT 2.