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2SC1472 Datasheet PDF

Renesas Electronics 2SC1472

The 2SC1472(K) is grouped by hFE as follows.
Part No. 2SC1472
Datasheet 2SC1472 Download
Manufacturer
Renesas Electronics
Description Silicon NPN Epitaxial Type Transistor
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2SC1472 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 40 30 10 300 500 500 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 Free Datasheet 2SC1472(K)

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CEO ICBO IEBO hFE1*1 hFE2*1 hFE3*1 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Turn on time VCE(sat) VBE(sat) fT Cob ton Min 30 — — 2000 3000 3000 — — 50 — — Typ — — — — — — — — — — 60 Max — 100 100 100000 — — 1.5 2.0 — 10 — V V MHz pF ns Unit V nA nA Test conditions IC = 1 mA, RBE = ∞ VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, VCE = 5 V IC =...
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