DESCRIPTION
t Two c transistor chips equivalent to the 2SC1275 are housed in a package the same size as TO-18. du FEATURES
High gain bandwidth product: fT = 2 GHz TYP. o Compact package, the same size as TO-18 PACKAGE DIMENSIONS (in millimeters) φ 5.84 MAX. φ 4.95 MAX. 12.5 MIN. 5.33 MAX. 1.0 0.25 r ABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C) P PARAMETER Collector to Base Voltage d Collector to Emitter Voltage e Emitter to Base Voltage Collector Current u Collector Dissipation Total Power Dissipation in Junction Temperature t Storage Temperature SYMBOL RATINGS UNIT VCBO 30 V VCEO 14 V VEBO 3.0 V IC 50 mA PC 200 mW/unit PT 300 mW Tj 200 ˚C Tstg –65 to +200 ˚C n ELECTRICAL CHARACTERISTICS
(TA = 25 ˚C) φ 2.54 60˚ 2 1 3 4 1.05 65 60˚ PIN CONNECTIONS 1. 1E 2. 1C 1C 2C 2 5 3. 1B 4. 2B 5. 2C 3 1B 4 2B 6. 2E 1 6 1E 2E o PARAMETER c Collector Cut-off Current Emitter Cut-off Current is DC Current Gain hFE Ratio DDifference of Base to Emitter Voltage SYMBOL ICES IEBO hFE hFE1/hFE2 ∆VBE TEST CONDITIONS VCE = 15 V, RBE = 0 VEB = 2.0 V, IC = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA* VCE = 10 V, IC = 10 mA MIN.
Renesas Electronics
