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2SC2463 Datasheet PDF

Renesas Electronics 2SC2463

The 2SC2463 is grouped by hFE as follows.
Part No. 2SC2463
Datasheet 2SC2463 Download
Manufacturer
Renesas Electronics
Description Silicon NPN Epitaxial Transistor
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2SC2463 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 55 50 5 100 150 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 6 Free Datasheet 2SC2463

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Note: 1. The 2SC2463 is grouped by hFE as follows. Grade D E Mark DD DE hFE 250 to 500 400 to 800 Min 55 50 5 — — 250 — — Typ — — — — — — — — Max — — — 0.5 0.5 800 0.5 0.75 Unit V V V µA µA V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 30 V, IE...
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