• Part: 2SC2570A
  • Description: NPN EPITAXIAL SILICON RF TRANSISTOR
  • Category: Transistor
  • Manufacturer: Renesas
  • Size: 179.97 KB
Download 2SC2570A Datasheet PDF
Renesas
2SC2570A
2SC2570A is NPN EPITAXIAL SILICON RF TRANSISTOR manufactured by Renesas.
DATA SHEET NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges. Features - Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @ VCE = 10 V, IC = 5 mA, f = 1 GHz - Wide dynamic range : NF = 1.9 dB TYP., Ga = 9 dB TYP. @ VCE = 10 V, IC = 15 mA, f = 1 GHz ORDERING INFORMATION Part Number 2SC2570A 2SC2570A-T Quantity 500 pcs (Non reel) 2.5 kpcs/box (Box type) Supplying Form - 18 mm wide radial taping - Supplying paper tape with in a box Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity...