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2SC2619 Datasheet PDF

Renesas Electronics 2SC2619

The 2SC2619 is grouped by hFE as follows.
Part No. 2SC2619
Datasheet 2SC2619 Download
Manufacturer
Renesas Electronics
Description Silicon NPN Epitaxial Type Transistor
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2SC2619 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 30 5 100 150 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 8 Free Datasheet 2SC2619

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE fT Cob NF Min 30 30 5 — — 60 — — — — — Typ — — — — — — — — 230 — 5.0 Max — — — 0.5 0.5 200 1.1 0.75 — 3.5 — Unit V V V µA µA V V MHz pF dB Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB =...
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