Renesas Electronics 2SC2853
Silicon NPN Epitaxial Type Transistor
| Part No. | 2SC2853 |
|---|---|
| Datasheet | 2SC2853 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon NPN Epitaxial Type Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 90 90 5 100 –100 400 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 6 Free Datasheet 2SC2853ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Min 90 90 5 — — 400 — — — — Typ — — — — — — 0.05 0.7 310 3 Max — — — 0.1 0.1 800 0.10 1.0 — — Unit V V V µA µA V V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 70 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 6 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Rev.
