• Part: 2SC3736
  • Description: NPN SILICON EPITAXIAL TRANSISTOR
  • Category: Transistor
  • Manufacturer: Renesas
  • Size: 236.62 KB
Download 2SC3736 Datasheet PDF
Renesas
2SC3736
DESCRIPTION The 2SC3736 is designed for power amplifier and high speed switching applications. FEATURES - High speed, high voltage switching - Low collector saturation voltage - plementary to the 2SA1460 PNP transistor. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current (DC) Collector Current (pulse) Note1 Total Power Dissipation Note2 IC(DC) IC(pulse) Junction Temperature Storage Temperature Tj °C Tstg - 55 to +150 °C PACKAGE DRAWING (Unit: mm) 4.5 ±0.1 1.6 ±0.2 1.5 ±0.1 2.5 ±0.1 4.0 ±0.25 1 0.42 ±0.06 0.42 ±0.06 0.47 ±0.06 +0.03 - 0.05 0.8 MIN. 1.5 TYP. 3.0 TYP. 1: Emitter 2: Collecter (Fin) 3:...