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2SC3736 - NPN SILICON EPITAXIAL TRANSISTOR

General Description

The 2SC3736 is designed for power amplifier and high speed switching applications.

Key Features

  • High speed, high voltage switching.
  • Low collector saturation voltage.
  • Complementary to the 2SA1460 PNP transistor.

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Datasheet Details

Part number 2SC3736
Manufacturer Renesas
File Size 236.62 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet 2SC3736 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3736 is designed for power amplifier and high speed switching applications. FEATURES • High speed, high voltage switching • Low collector saturation voltage • Complementary to the 2SA1460 PNP transistor. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 80 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 5.0 V Collector Current (DC) Collector Current (pulse) Note1 Total Power Dissipation Note2 IC(DC) IC(pulse) PT 1.0 A 2.0 A 2.0 W Junction Temperature Storage Temperature Tj 150 °C Tstg −55 to +150 °C PACKAGE DRAWING (Unit: mm) 4.5 ±0.1 1.6 ±0.2 1.5 ±0.1 2.5 ±0.1 4.0 ±0.25 1 0.42 ±0.