Renesas Electronics 2SC4050
NPN Transistor
| Part No. | 2SC4050 |
|---|---|
| Datasheet | 2SC4050 Download |
| Manufacturer |  Renesas Electronics |
| Description | NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 120 120 5 100 150 150 –55 to +150 (Ta = 25°C) Unit V V V mA mW °C °C R07DS0274EJ0400 Rev.4.00 Jan 10, 2014 Page 1 of 6 2SC4050 PreliminaryELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 120 — — V IC = 10 μA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 120 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V IE = 10 μA, IC = 0 Collector cutoff current ICBO — — 0.1 μA VCB = 70 V, IE = 0 Emitter cutoff current IEBO — — 0.1 μA VEB = 2 V, IC = 0 DC current transfer ratio hFE 400 — 800 VCE = 12 V, IC = 2 mA*1 Collector to emitter saturation voltage VCE(sat) — — 0.1 V IC = 10 mA, IB = 1 mA*1 Base to emitter saturation voltage VBE(sat) — — 1.1 V IC = 10 mA, IB = 1 mA*1 Notes: 1.
