2SC5700 - Silicon NPN Transistor

Renesas

Key Features

High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline REJ03G0751-0100 (Previous ADE-208-1435) Rev.1.00 Aug.10.2005.

2SC5700 silicon npn transistor by Renesas - Datasheet Preview

Datasheet Details

Part number	2SC5700
Manufacturer	Renesas
File Size	96.88 KB
Description	Silicon NPN Transistor
Datasheet	2SC5700 Datasheet

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2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline REJ03G0751-0100 (Previous ADE-208-1435) Rev.1.00 Aug.10.2005 RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 Note: Marking is “WB–“. 1 2 1. Emitter 2. Base 3. Collector *MFPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Value 15 4 1.5 50 80 150 −55 to +150 (Ta = 25°C) Unit V V V mA mW °C °C Rev.1.