Datasheet4U.com

2SC5820 Datasheet PDF

Renesas Electronics 2SC5820

Silicon NPN Epitaxial Type Transistor

Part No. 2SC5820
Datasheet 2SC5820 Download
Manufacturer
Renesas Electronics
Description Silicon NPN Epitaxial Type Transistor
Buy Stock & Price
2SC5820 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 12 4.0 1.5 35 100 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 10 2SC5820

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure 3rd. Order Intercept Point Symbol ICBO ICEO IEBO hFE Cob fT PG NF IP3 Min    70  17 13   Typ    110 0.3 20 17.5 1.15 10 Max 1 1 10 150 0.6   1.7  Unit µA µA µA  pF GHz dB dB dBm Test conditions VCB = 12 V, IE = 0 VCE = 4 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 2 V, IC = 20 mA VCB = 2 V, IE = 0, f = 1 MHz VCE = 2 V, IC = 30 mA f = 2 GHz VCE = 2 V, IC = 30 mA, f = 1.8 GHz VCE = 2 V, IC = 5 mA, f = 1.8 GHz VCE = 2 V, I...
2SC5820 page 2 preview 2SC5820 page 3 preview