Renesas Electronics 2SC5975
Silicon NPN Epitaxial Type Transistor
| Part No. | 2SC5975 |
|---|---|
| Datasheet | 2SC5975 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon NPN Epitaxial Type Transistor |
| Buy | Stock & Price |
FEATURES
● High gain bandwidth product fT = 20 GHz typ.● High power gain and low noise figure; PG = 17.5 dB typ. , NF = 1.15 dB typ. at f = 1.8 GHz Outline MFPAK-4 3 2 2 WU4 1 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is “WU-”.
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector power dissipation Pc*1 Junction temperature Tj Storage temperature Tstg Note: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side ) Ratings 12 4 1.5 35 200 150 –55 to +150 Unit V V V mA mW °C °C Rev.1.00, Jul.06.2004, page 1 of 17 2SC5975ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol ICBO ICEO IEEO hFE Cob fT PG NF Min — — — 70 — 17 13 — Typ — — — 110 0.3 20 17.5 1.15 Max 1 1 10 150 0.6 — — 1...
