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2SD1134 Datasheet PDF

Renesas Electronics 2SD1134

The 2SD1133 and 2SD1134 are grouped by hFE1 as follows.
Part No. 2SD1134
Datasheet 2SD1134 Download
Manufacturer
Renesas Electronics
Description Silicon NPN Transistor
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2SD1134 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * 1 Tj Tstg 1. Base 2. Collector (Flange) 3. Emitter Ratings 2SD1133 2SD1134 Unit 70 70 V 50 60 V 5 5 V 4 4 A 8 8 A 40 40 W 150 150 °C –45 to +150 –45 to +150 °C Free Datasheet 2SD1133, 2SD1134

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) 2SD1133 2SD1134 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 70 — — 70 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 50 — — 60 — — V IC = 50 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 ——5 ——V IE = 10 µA, IC = 0 Collector cutoff current ICBO — —1 — —1 µA VCB = 50 V, IE = 0 DC current transfer ratio hFE1*1 60 — 320 60 — 320 VCE = 4V IC = 1 A*2 hFE2 35 — — 35 — — IC = 0.1...
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