• Part: 2SD1164-Z
  • Description: SILICON POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Renesas
  • Size: 1.77 MB
Download 2SD1164-Z Datasheet PDF
Renesas
2SD1164-Z
DESCRIPTION R07DS0254EJ0400 Rev.4.00 Feb 24, 2011 The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES - High h FE = 2 000 to 30 000 <R> ABSOLUTE MAXIMUM RATINGS (TA = 25°C) CHARACTERISTICS Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Note 1 SYMBOL VCBO VCEO VEBO IC(DC) IC(pulse) Note 2 RATINGS 150 60 8.0 2 4 2.0 150 - 55 to +150 UNIT V V V A A W °C °C Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature PT Tj Tstg Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R07DS0254EJ0400 Rev.4.00 Feb 24, 2011 Page 1 of 4 Free Datasheet http://../ Chapter Title R07DS0254EJ0400 Rev.4.00 Feb...