Renesas Electronics 2SD1978
NPN Transistor
| Part No. | 2SD1978 |
|---|---|
| Datasheet | 2SD1978 Download |
| Manufacturer |  Renesas Electronics |
| Description | NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature E to C diode forward current Symbol VCBO VCEO VEBO IC ic (peak) PC Tj Tstg ID Ratings 120 120 7 1.5 3.0 0.9 150 –55 to +150 1.5 (Ta = 25°C) Unit V V V A A W °C °C A Rev.2.00 Aug 10, 2005 page 1 of 5 2SD1978ELECTRICAL CHARACTERISTICS
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage E to C diode forward voltage Note: 1. Pulse test Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD Min 120 120 7 — — 2000 — — — — — (Ta = 25°C) Typ Max Unit Test conditions — — V IC = 0.1 mA, IE = 0 — — V IC = 10 mA, RBE = ∞ — — V IE = 50 mA, IC = 0 — 1.0 µA VCB = 1...
