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2SJ486
Silicon P Channel MOS FET
Description
Low frequency power switching
Features
• Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA)
• 2.5 V gate drive devices. • Small package (MPAK).
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
Note: Marking is “ZU–”.
3 G
1 2
REJ03G0869-0300 (Previous: ADE-208-512A)
Rev.3.00 Sep 07, 2005
D 1. Source 2. Gate 3. Drain
S
Rev.3.00 Sep 07, 2005 page 1 of 6
2SJ486
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 100 µs, duty cycle ≤ 10%
Symbol VDSS VGSS ID
ID (pulse) Note 1 Pch Tch Tstg
Value –30 ±10 –0.3 –0.
2SJ486 Datasheet
