Renesas Electronics 2SJ552L
P-Channel MOSFET
| Part No. | 2SJ552L |
|---|---|
| Datasheet | 2SJ552L Download |
| Manufacturer |  Renesas Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
High speed power switching REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005FEATURES
● Low on-resistance RDS (on) = 0.042 Ω typ.● Low drive current.
● 4 V gate drive devices.
● High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 D 1 23 123 G S 1. Gate 2. Drain 3. Source 4. Drain Rev.4.00 Sep 07, 2005 page 1 of 8 2SJ552(L), 2SJ552(S)
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value –60 ±20 –20 –80 –20 –20 34 75 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Electrical...
