Renesas Electronics 2SJ77
Silicon P-Channel MOS FET
DESCRIPTION
High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216FEATURES
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● Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source (Flange) 3. Drain 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 5 2SJ76, 2SJ77, 2SJ78, 2SJ79
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) 2SJ76 2SJ77 2SJ78 2SJ79 Symbol VDSX Value –140 –160 –180 VGSS ID IDR Pch Note 1 Pch Tch Tstg –200 ±15 –500 –500 1.75 30 150 –45 to +150 V mA mA W W °C °C Unit V Item Drain to source voltage Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage 2SJ76 2SJ77 2SJ78 V (BR) GSS VGS (on) VDS (sat) |yfs| Ciss Crss Symbol V (BR) DSX...