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2SK1156 - Silicon N Channel MOSFET

Download the 2SK1156 datasheet PDF. This datasheet also covers the 2SK1155 variant, as both devices belong to the same silicon n channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK1155-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SK1156
Manufacturer Renesas
File Size 89.94 KB
Description Silicon N Channel MOSFET
Datasheet download datasheet 2SK1156 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK1156 Silicon N-Channel MOSFET Hitachi Semiconductor
2SK1151 Silicon N-Channel MOSFET Hitachi Semiconductor
2SK1151L Silicon N-Channel MOSFET Hitachi Semiconductor
2SK1151S Silicon N-Channel MOSFET Hitachi Semiconductor
2SK1152 Silicon N-Channel MOSFET Hitachi Semiconductor

Other Datasheets by Renesas

Part Number Description
2SK1153 Silicon N-Channel MOSFET
2SK1154 Silicon N-Channel MOSFET
2SK1155 Silicon N Channel MOSFET
2SK1157 Silicon N-Channel MOSFET
2SK1158 Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE-208-1247) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 6 Free Datasheet http://www.Datasheet4U.com 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.