Renesas Electronics 2SK1160
Silicon N-Channel MOSFET
| Part No. | 2SK1160 |
|---|---|
| Datasheet | 2SK1160 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1159, 2SK1160
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2SK1159 2SK1160 VGSS ID ID(pulse)* IDR 2 Pch* Tch Tstg 1 Symbol VDSS Ratings 450 500 ±30 8 32 8 60 150 –55 to +150 Unit V V A A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown 2SK1159 voltage 2SK1160 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1159 2SK1160 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off...
