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2SK1629-E1-E Description

2SK1629-E1-E 500V - 30A - MOS FET High Speed Power Switching.

2SK1629-E1-E Key Features

  • Low on-resistance RDS(on) = 0.22 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C)
  • High speed switching
  • Low drive current
  • Suitable for switching regulator and DC-DC converter
  • Quality grade: Standard