• Part: 2SK2096
  • Description: Silicon N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 1.45 MB
Download 2SK2096 Datasheet PDF
Renesas
2SK2096
Features - Low on-resistance - High speed switching - Low drive current - 4 V gate drive device can be driven from 5 V source - Suitable for switching regulator, DC-DC converter - Avalanche ratings Outline REJ03G0997-0200 (Previous: ADE-208-1344) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1. Gate 2. Drain (Flange) 3. Source 1 2 Rev.2.00 Sep 07, 2005 page 1 of 7 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)- 1 IDR IAP- 3 EAR- 3 Pch- 2 Tch Tstg Ratings 60 ±20 45 180 45 45 173 100 150 - 55 to +150 (Ta = 25°C) Unit V V A A A A m J W °C °C Electrical Characteristics Item Symbol Min Drain to source...
2SK2096 reference image

Representative 2SK2096 image (package may vary by manufacturer)