Renesas Electronics 2SK2595
Silicon N-Channel MOSFET
| Part No. | 2SK2595 |
|---|---|
| Datasheet | 2SK2595 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. (f = 836.5 MHz)● Compact package capable of surface mounting Outline RP8P D G 1 3 2 S 1. Gate 2. Source 3. Drain Note: Marking is "AX". This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 PchNote2 Tch Tstg Ratings 17 ±10 1.1 5 20 150 – 45 to +150 Unit V V A A W °C °C Rev.3.00, Aug.26.2004, page 1 of 13 DataSheet 4 U .com 2SK2595ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Drain Efficiency Symbol IDSS IGSS VGS(off) Ciss Coss Pout ηD Min. — — 0.6 — — 5.37 50 Typ — — — 68 27 7 60 Max.
