Description
The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source.
Features
- Directly driven by a 4.0 V power source.
- Low on-state resistance RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 m MAX. (VGS = 4.0 V, ID = 2.0 A)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SK2857C-T1-AZ/AY
-AZ : Sn-Bi , -AY : Pure Sn
1000p/Reel
SC-62 (3p PoMM)
Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking XB
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltag.
2SK2857C Datasheet
