• Part: 2SK2931
  • Description: Silicon N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 78.61 KB
Download 2SK2931 Datasheet PDF
Renesas
2SK2931
2SK2931 is Silicon N-Channel MOSFET manufactured by Renesas.
Features - Low on-resistance RDS =0.010 Ω typ. - High speed switching - 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) REJ03G1045-0500 (Previous: ADE-208-554C) Rev.5.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source Rev.5.00 Sep 07, 2005 page 1 of 7 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 60 ±20 45 180 45 45 173 75 150 - 55 to +150 (Ta = 25°C) Unit V V A A A A m J W °C °C Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS - Zero gate voltage drain current IDSS - Gate to source cutoff voltage VGS(off) Static drain to source on state resistance RDS(on) -...