2SK2936 Overview
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1050-0400 (Previous: ADE-208-559B)
2SK2936 Key Features
- Low on-resistance RDS =0.010 Ω typ
- High speed switching
- 4 V gate drive device can be driven from 5 V source