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2SK2937 - Silicon N Channel MOS FET

Datasheet Summary

Features

  • Low on-resistance RDS =0.026 Ω typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline.

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Datasheet Details

Part number 2SK2937
Manufacturer Renesas
File Size 140.06 KB
Description Silicon N Channel MOS FET
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2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 (Previous: ADE-208-560C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00 Sep 07, 2005 page 1 of 7 Free Datasheet http://www.Datasheet4U.com 2SK2937 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
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