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2SK2978 - Silicon N-Channel MOSFET

Features

  • Low on-resistance RDS(on) = 0.09 Ω typ. (VGS = 4 V, ID = 1.5 A).
  • Low drive current.
  • High speed switching.
  • 2.5 V gate drive devices. REJ03G1060-0500 (Previous: ADE-208-659C) Rev.5.00 Sep.07,2005 Outline.

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Datasheet Details

Part number 2SK2978
Manufacturer Renesas
File Size 77.56 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK2978 Datasheet
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Full PDF Text Transcription

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2SK2978 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.09 Ω typ. (VGS = 4 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive devices. REJ03G1060-0500 (Previous: ADE-208-659C) Rev.5.00 Sep.07,2005 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 21 3 4 D 1. Gate 2. Drain G 3. Source 4. Drain Note: Marking is “ZY” S *UPAK is a trademark of Renesas Technology Corp. Rev.5.00 Sep.
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