Renesas Electronics 2SK3107C
The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source.| Part No. | 2SK3107C |
|---|---|
| Datasheet | 2SK3107C Download |
| Manufacturer |  Renesas Electronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Directly driven by a 4.5 V power source.● Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2 MAX. (VGS = 4.5 V, ID = 50 mA) Ordering Information Part Number Lead Plating Packing Package 2SK3107C-T1-A/AT -A:Sn-Bi , -AT:Pure Sn 3000p/Reel SC-75 (3pUSM) Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking XP
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 Gate to Source Voltage (VDS = 0 V) VGSS 20 Drain Current (DC) ID(DC) 200 Drain Current (pulse) Note1 ID(pulse) 800 Total Power Dissipation Note2 PT 200 Channel Temperature Tch 150 Storage Temperature Tstg 55 to 150 Note 1. PW 10 s, Duty Cycle 1% Note 2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm V V mA mA mW C C R07DS1286EJ0200 Rev.2.00 Jul 16, 2015 Page 1 of 6 2SK3107CELECTRICAL CHARACTERISTICS
(TA = 25C) Characteristics Zero Gate Voltage Drain Current Gate Leaka...
