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2SK3158
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 40 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
G
123
REJ03G1083-0400 (Previous: ADE-208-757B)
Target Specification Rev.4.00
Sep 07, 2005
D 1. Gate 2. Drain (Flange) 3. Source
S
Rev.4.00 Sep 07, 2005 page 1 of 3
2SK3158
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C 3.
2SK3158 Datasheet
