Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
Features
- Low on-resistance RDS = 40 mΩ typ.
- High speed switching
- 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
REJ03G1083-0400 (Previous: ADE-208-757B)
Target Specification Rev.4.00
Sep 07, 2005
D 1. Gate 2. Drain (Flange) 3. Source
Rev.4.00 Sep 07, 2005 page 1 of...
